Direct growth of graphene on dielectric surfaces via RTP

This research area is to develop a scalable, cost-effective and transfer-free process for high-quality, wafer-scale graphene production on various dielectric surfaces. A novel synthesis method of solid-state transformation via rapid thermal annealing technique will be developed and studied, in which the growth mechanism and controllable graphene growth will be systematically investigated. The success of this research will provide a unique solution to the existing challenges in the current graphene production and promote the graphene-based industrial application.  



Department of Electrical and Computer Engineering
University of Nebraska-Lincoln
209N Scott Engineering Center
P.O. Box 880511
Lincoln, NE 68588-0511, USA


Phone: (402) 472-3771
Fax:     (402) 472-4732



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