Rapid growth of GaN epitaxial layers at low temperatures using laser-assisted MOVPE.

The goal is to synthesize highly crystalline GaN epitaxial layers at low temperatures using laser-assisted metal organic vapor phase epitaxy (L-MOVPE). In this approach, the ammonia (NH3) molecules will be dissociated by resonantly exciting one of its vibrational modes using a wavelength-tunable CO2 laser. The resonant excitation will break the bonding of the NH3 molecules at reduced temperature compared to the conventional methods. The low temperature growth will minimize the thermally induced defects of GaN epitaxial layer. This method can be extended for the growth of III-nitrides and other nitride-based materials.

 

Location

Department of Electrical and Computer Engineering
University of Nebraska-Lincoln
209N Scott Engineering Center
P.O. Box 880511
Lincoln, NE 68588-0511, USA
 

Contact

Phone: (402) 472-3771
Fax:     (402) 472-4732

Email: ylu2@unl.edu

 

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